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| x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.105 MAX x Gate Protect Diode Built-in x Ultra High-Speed Switching x SOT-89 Package s General Description The XP161A11A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible. s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s Features Low on-state resistance: Rds(on)=0.065(Vgs=10V) Rds(on)=0.105(Vgs=4.5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage: 4.5V High density mounting: SOT-89 u s Pin Configuration s Pin Assignment PIN NUMBER 1 2 3 1 G 2 D 3 S PIN NAME G D S FUNCTION Gate Drain Source SOT-89 (TOP VIEW) s Equivalent Circuit s Absolute Maximum Ratings PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 30 20 4 16 4 2 150 -55~150 Ta=25: UNITS V V A A A W : : 1 2 3 Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature N-Channel MOS FET (1 device built-in) Note: When implemented on a ceramic PCB s Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=30V, Vgs=0V Vgs=20V, Vds=0V Id=1mA, Vds=10V Id=2A, Vgs=10V Id=2A, Vgs=4.5V Id=2A, Vds=10V If=4A, Vgs=0V MIN TYP MAX 10 10 1.0 0.05 0.075 5.5 0.85 1.1 2.5 0.065 0.105 UNITS A A V S V Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 270 150 55 MAX Ta=25: UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=2A Vdd=10V CONDITIONS MIN TYP 10 15 35 15 MAX Ta=25: UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance (channel-surroundings) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS :/W Drain Current vs. Drain /Source Voltage Pulse Test, Ta=25: Drain Current vs. Gate/Source Voltage Vds=10V, Pulse Test Drain Current:Id (A) Drain/Source Voltage:Vds (V) Drain Current:Id (A) Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage Pulse Test, Ta=25: Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25: Drain /Source On-State Resistance :Rds (on) () u Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance :Rds (on) () Drain Current:Id (A) Drain/Source On-State Resistance vs. Ambient Temp. Pulse Test Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Vds=10V, Id=1mA Ambient Temperature:Topr (:) Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) Drain/Source On-State Resistance :Rds (on) () Ambient Temperature:Topr (:) Electrical Characteristics Capacitance vs. Drain/Source Voltage Switching Time vs. Drain Current Gate/Source Voltage vs. Gate Charge Reverse Drain Current vs. Source/Drain Voltage u Standardized Transition Thermal Resistance vs. Pulse Width |
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